2N5582

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

500mW

Package / Case :

TO-206AB, TO-46-3 Metal Can

Transistor Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn Off Time-Max (toff) :

300ns

Terminal Finish :

TIN LEAD

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA

Published :

2002

Qualification Status :

Not Qualified

Number of Elements :

1

Max Collector Current :

800mA

Packaging :

Bulk

Collector Emitter Voltage (VCEO) :

1V

Power - Max :

500mW

ECCN Code :

EAR99

Contact Plating :

Lead, Tin

Pin Count :

3

Factory Lead Time :

12 Weeks

Terminal Form :

Wire

Collector Emitter Breakdown Voltage :

50V

Mounting Type :

Through Hole

Terminal Position :

BOTTOM

Turn On Time-Max (ton) :

35ns

RoHS Status :

Non-RoHS Compliant

JESD-30 Code :

O-MBCY-W3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

No

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Mount :

Through Hole

JESD-609 Code :

e0

Polarity/Channel Type :

NPN

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~200°C TJ

Current - Collector Cutoff (Max) :

10μA ICBO

Collector Base Voltage (VCBO) :

75V

Transition Frequency :

300MHz

Number of Terminations :

3

Configuration :

Single