2N5581

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Mfr.Part #
2N5581
Manufacturer
Microchip Technology
Package / Case
TO-206AB, TO-46-3 Metal Can
Datasheet
Download
Description
TRANS NPN 50V 0.8A TO46
Stock
26,628
In Stock :
26,628

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~200°C TJ
Number of Terminations :
3
Current - Collector Cutoff (Max) :
10μA ICBO
Collector Emitter Voltage (VCEO) :
50V
Number of Elements :
1
Transistor Type :
NPN
Turn Off Time-Max (toff) :
300ns
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA 10V
Terminal Finish :
TIN LEAD
Transistor Element Material :
SILICON
Factory Lead Time :
12 Weeks
Package / Case :
TO-206AB, TO-46-3 Metal Can
Pin Count :
3
Transition Frequency :
250MHz
Packaging :
Bulk
RoHS Status :
Non-RoHS Compliant
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
Published :
2002
Qualification Status :
Not Qualified
Pbfree Code :
No
Max Power Dissipation :
500mW
JESD-609 Code :
e0
Polarity/Channel Type :
NPN
Mount :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
1V @ 50mA, 500mA
Contact Plating :
Lead, Tin
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
Single
Current - Collector (Ic) (Max) :
800mA
JESD-30 Code :
O-MBCY-W3
Terminal Form :
Wire
Terminal Position :
BOTTOM
Collector Base Voltage (VCBO) :
75V
Max Collector Current :
800mA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn On Time-Max (ton) :
35ns
Datasheets
2N5581
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N5581 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~200°C TJ, Number of Terminations:3, Package / Case:TO-206AB, TO-46-3 Metal Can, Mounting Type:Through Hole, 2N5581 pinout, 2N5581 datasheet PDF, 2N5581 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N5581 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology 2N5581


NPN -55°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-206AB, TO-46-3 Metal Can Bulk Through Hole

2N5581 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 250MHz in the part.When collector current reaches its maximum, it can reach 800mA volts.

2N5581 Features


the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
a transition frequency of 250MHz


2N5581 Applications


There are a lot of Microsemi Corporation
2N5581 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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