2N5581
- Mfr.Part #
- 2N5581
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AB, TO-46-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO46
- Stock
- 26,628
- In Stock :
- 26,628
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~200°C TJ
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Turn Off Time-Max (toff) :
- 300ns
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Terminal Finish :
- TIN LEAD
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 12 Weeks
- Package / Case :
- TO-206AB, TO-46-3 Metal Can
- Pin Count :
- 3
- Transition Frequency :
- 250MHz
- Packaging :
- Bulk
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Published :
- 2002
- Qualification Status :
- Not Qualified
- Pbfree Code :
- No
- Max Power Dissipation :
- 500mW
- JESD-609 Code :
- e0
- Polarity/Channel Type :
- NPN
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Contact Plating :
- Lead, Tin
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 800mA
- JESD-30 Code :
- O-MBCY-W3
- Terminal Form :
- Wire
- Terminal Position :
- BOTTOM
- Collector Base Voltage (VCBO) :
- 75V
- Max Collector Current :
- 800mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn On Time-Max (ton) :
- 35ns
- Datasheets
- 2N5581
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NPN -55°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-206AB, TO-46-3 Metal Can Bulk Through Hole
2N5581 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 250MHz in the part.When collector current reaches its maximum, it can reach 800mA volts.
2N5581 Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
a transition frequency of 250MHz
2N5581 Applications
There are a lot of Microsemi Corporation
2N5581 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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