2N5551ZL1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

40

Frequency - Transition :

300MHz

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Polarity/Channel Type :

NPN

JESD-30 Code :

O-PBCY-T3

Transition Frequency :

100MHz

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Voltage - Collector Emitter Breakdown (Max) :

160V

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Pbfree Code :

yes

Transistor Application :

AMPLIFIER

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Additional Feature :

EUROPEAN PART NUMBER

Transistor Element Material :

SILICON

Power - Max :

625mW

Reach Compliance Code :

Unknown

Packaging :

Tape and Box (TB)

JESD-609 Code :

e1

Current - Collector (Ic) (Max) :

600mA

Pin Count :

3

Terminal Position :

BOTTOM

Surface Mount :

No

Terminal Finish :

TIN SILVER COPPER

Mounting Type :

Through Hole

Configuration :

Single

Number of Terminations :

3

Current - Collector Cutoff (Max) :

50nA ICBO

Qualification Status :

COMMERCIAL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)