2N5551YTA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Terminal Position :

BOTTOM

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Packaging :

Tape and Box (TB)

Power - Max :

625mW

Voltage - Collector Emitter Breakdown (Max) :

160V

Transistor Application :

AMPLIFIER

Terminal Finish :

NOT SPECIFIED

Transistor Type :

NPN

Frequency - Transition :

100MHz

RoHS Status :

ROHS3 Compliant

Configuration :

Single

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Surface Mount :

No

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Current - Collector (Ic) (Max) :

600mA

Polarity/Channel Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

O-PBCY-T3

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 10mA 5V

Transition Frequency :

100MHz

Number of Terminations :

3

Qualification Status :

COMMERCIAL