2N5551YTA

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Mfr.Part #
2N5551YTA
Manufacturer
Fairchild Semiconductor
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 160V 0.6A TO92-3
Stock
25,587
In Stock :
25,587

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-30 Code :
O-PBCY-T3
Mounting Type :
Through Hole
Qualification Status :
COMMERCIAL
Operating Temperature :
-55°C~150°C TJ
Polarity/Channel Type :
NPN
Terminal Position :
BOTTOM
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
AMPLIFIER
Power - Max :
625mW
DC Current Gain (hFE) (Min) @ Ic, Vce :
180 @ 10mA 5V
Number of Terminations :
3
Transition Frequency :
100MHz
Vce Saturation (Max) @ Ib, Ic :
200mV @ 5mA, 50mA
RoHS Status :
ROHS3 Compliant
Current - Collector (Ic) (Max) :
600mA
Configuration :
Single
Number of Elements :
1
Transistor Type :
NPN
Packaging :
Tape and Box (TB)
Transistor Element Material :
SILICON
Voltage - Collector Emitter Breakdown (Max) :
160V
Frequency - Transition :
100MHz
Terminal Finish :
NOT SPECIFIED
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount :
No
Datasheets
2N5551YTA
Introducing Transistors - Bipolar (BJT) - Single Fairchild Semiconductor 2N5551YTA from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), 2N5551YTA pinout, 2N5551YTA datasheet PDF, 2N5551YTA amp .Beyond Transistors - Bipolar (BJT) - Single Fairchild Semiconductor 2N5551YTA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor 2N5551YTA


NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

2N5551YTA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 10mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 5mA, 50mA.Parts of this part have transition frequencies of 100MHz.This device displays a 160V maximum voltage - Collector Emitter Breakdown.

2N5551YTA Features


the DC current gain for this device is 180 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
a transition frequency of 100MHz


2N5551YTA Applications


There are a lot of Rochester Electronics, LLC
2N5551YTA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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