2N5551YBU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

600 mA

Transistor Element Material :

SILICON

Configuration :

Single

Transistor Application :

AMPLIFIER

Supplier Device Package :

TO-92-3

Package :

Bulk

Qualification Status :

COMMERCIAL

DC Current Gain-Min (hFE) :

30

Polarity/Channel Type :

NPN

Number of Elements :

1

Voltage - Collector Emitter Breakdown (Max) :

160 V

JEDEC-95 Code :

TO-92

Number of Terminals :

3

Frequency - Transition :

100MHz

Terminal Finish :

NOT SPECIFIED

Surface Mount :

No

Power - Max :

625 mW

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 10mA, 5V

Terminal Form :

THROUGH-HOLE

Base Product Number :

2N5551

Collector Current-Max (IC) :

0.6 A

Collector-Emitter Voltage-Max :

160 V

Manufacturer :

Rochester Electronics LLC

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Product Status :

Active

Operating Temperature :

-55°C ~ 150°C (TJ)

Package Shape :

Round

Current - Collector Cutoff (Max) :

-

Reach Compliance Code :

Unknown

JESD-30 Code :

O-PBCY-T3

Transistor Type :

NPN

Terminal Position :

BOTTOM

Series :

-

Mounting Type :

Through Hole