2N5551TFR

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

BOTTOM

hFE Min :

80

Polarity/Channel Type :

NPN

Collector Emitter Voltage (VCEO) :

160V

Number of Elements :

1

Factory Lead Time :

6 Weeks

Number of Pins :

3

Radiation Hardening :

No

Frequency :

300MHz

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

6V

JESD-609 Code :

e3

Transistor Application :

AMPLIFIER

Transistor Type :

NPN

Base Part Number :

2N5551

Collector Emitter Saturation Voltage :

200mV

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

160V

Max Breakdown Voltage :

160V

Published :

2007

Gain Bandwidth Product :

300MHz

Packaging :

Tape and Reel (TR)

Transition Frequency :

100MHz

Transistor Element Material :

SILICON

Contact Plating :

Tin

Collector Base Voltage (VCBO) :

180V

Max Collector Current :

600mA

Weight :

240mg

Current - Collector Cutoff (Max) :

50nA ICBO

Number of Terminations :

3

Mounting Type :

Through Hole

Mount :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Max Power Dissipation :

625mW

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Current Rating :

600mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Collector Emitter Breakdown Voltage :

160V

Frequency - Transition :

100MHz

Power Dissipation :

625mW

Pbfree Code :

yes

Lead Free :

Lead Free