2N5551TF
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- Mfr.Part #
- 2N5551TF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- 2N5551 - SMALL SIGNAL BIPOLAR TR
- Stock
- 38,109
- In Stock ：
- 38,109
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 160V
- Factory Lead Time :
- 7 Weeks
- Transistor Element Material :
- SILICON
- Length :
- 5.2mm
- Mounting Type :
- Through Hole
- Max Collector Current :
- 600mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Elements :
- 1
- Height :
- 5.33mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- hFE Min :
- 80
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Number of Terminations :
- 3
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Terminal Position :
- BOTTOM
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Base Voltage (VCBO) :
- 180V
- Power Dissipation :
- 625mW
- Voltage - Rated DC :
- 160V
- Collector Emitter Voltage (VCEO) :
- 160V
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Frequency - Transition :
- 100MHz
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 300MHz
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Weight :
- 240mg
- Max Power Dissipation :
- 625mW
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Width :
- 4.19mm
- Mount :
- Through Hole
- Current Rating :
- 600mA
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 100MHz
- Frequency :
- 300MHz
- Collector Emitter Breakdown Voltage :
- 160V
- Published :
- 2007
- Collector Emitter Saturation Voltage :
- 200mV
- Base Part Number :
- 2N5551
- Datasheets
- 2N5551TF
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N5551TF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 80 @ 10mA 5V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 160V volts.When collector current reaches its maximum, it can reach 600mA volts.
2N5551TF Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5551TF Applications
There are a lot of ON Semiconductor
2N5551TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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