2N5551TF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency :

300MHz

ECCN Code :

EAR99

Frequency - Transition :

100MHz

Current Rating :

600mA

Lead Free :

Lead Free

Max Breakdown Voltage :

160V

Length :

5.2mm

Transition Frequency :

100MHz

Gain Bandwidth Product :

300MHz

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

6V

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

160V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Contact Plating :

Tin

Collector Emitter Voltage (VCEO) :

160V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Max Power Dissipation :

625mW

Number of Elements :

1

Collector Emitter Saturation Voltage :

200mV

Factory Lead Time :

7 Weeks

Element Configuration :

Single

Current - Collector Cutoff (Max) :

50nA ICBO

Height :

5.33mm

Mount :

Through Hole

hFE Min :

80

Mounting Type :

Through Hole

Packaging :

Tape and Reel (TR)

Width :

4.19mm

Transistor Element Material :

SILICON

Max Collector Current :

600mA

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

160V

Transistor Application :

AMPLIFIER

Collector Base Voltage (VCBO) :

180V

Number of Pins :

3

Published :

2007

Power Dissipation :

625mW

Terminal Position :

BOTTOM

JESD-609 Code :

e3

Weight :

240mg

Pbfree Code :

yes

Base Part Number :

2N5551