2N5551TAR
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- Mfr.Part #
- 2N5551TAR
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.6A TO92-3
- Stock
- 10,451
- In Stock ：
- 10,451
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 600mA
- Power Dissipation :
- 625mW
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Emitter Saturation Voltage :
- 200mV
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Type :
- NPN
- Number of Pins :
- 3
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 6V
- Base Part Number :
- 2N5551
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Max Power Dissipation :
- 625mW
- Mount :
- Through Hole
- Gain Bandwidth Product :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 160V
- Current Rating :
- 600mA
- Frequency :
- 300MHz
- Collector Base Voltage (VCBO) :
- 180V
- Frequency - Transition :
- 100MHz
- Weight :
- 178.2mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Voltage - Rated DC :
- 160V
- Collector Emitter Breakdown Voltage :
- 160V
- Packaging :
- Tape and Box (TB)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 80
- Datasheets
- 2N5551TAR
NPN -55°C~150°C TJ 50nA ICBO 1 Elements TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N5551TAR Overview
DC current gain in this device equals 80 @ 10mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 200mV @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.In extreme cases, the collector current can be as low as 600mA volts.
2N5551TAR Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
2N5551TAR Applications
There are a lot of ON Semiconductor
2N5551TAR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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