2N5551RLRPG
- Mfr.Part #
- 2N5551RLRPG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.6A TO92
- Stock
- 8,134
- In Stock :
- 8,134
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Box (TB)
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Current - Collector (Ic) (Max) :
- 600mA
- Peak Reflow Temperature (Cel) :
- 260
- JESD-30 Code :
- O-PBCY-T3
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Transistor Application :
- AMPLIFIER
- Configuration :
- Single
- Transition Frequency :
- 100MHz
- Surface Mount :
- No
- Qualification Status :
- COMMERCIAL
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Reach Compliance Code :
- Unknown
- JESD-609 Code :
- e1
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- TIN SILVER COPPER
- Power - Max :
- 625mW
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- BOTTOM
- Frequency - Transition :
- 300MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Voltage - Collector Emitter Breakdown (Max) :
- 160V
- Datasheets
- 2N5551RLRPG

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N5551RLRPG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 80 @ 10mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 5mA, 50mA.Parts of this part have transition frequencies of 100MHz.This device displays a 160V maximum voltage - Collector Emitter Breakdown.
2N5551RLRPG Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
a transition frequency of 100MHz
2N5551RLRPG Applications
There are a lot of Rochester Electronics, LLC
2N5551RLRPG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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