2N5551RLRPG

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Mfr.Part #
2N5551RLRPG
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 160V 0.6A TO92
Stock
8,134
In Stock :
8,134

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Packaging :
Tape and Box (TB)
Polarity/Channel Type :
NPN
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
Current - Collector Cutoff (Max) :
50nA ICBO
Current - Collector (Ic) (Max) :
600mA
Peak Reflow Temperature (Cel) :
260
JESD-30 Code :
O-PBCY-T3
Vce Saturation (Max) @ Ib, Ic :
200mV @ 5mA, 50mA
Transistor Application :
AMPLIFIER
Configuration :
Single
Transition Frequency :
100MHz
Surface Mount :
No
Qualification Status :
COMMERCIAL
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Pin Count :
3
Mounting Type :
Through Hole
Transistor Type :
NPN
Reach Compliance Code :
Unknown
JESD-609 Code :
e1
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
TIN SILVER COPPER
Power - Max :
625mW
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
40
Terminal Position :
BOTTOM
Frequency - Transition :
300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA 5V
Voltage - Collector Emitter Breakdown (Max) :
160V
Datasheets
2N5551RLRPG
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N5551RLRPG from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, 2N5551RLRPG pinout, 2N5551RLRPG datasheet PDF, 2N5551RLRPG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N5551RLRPG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N5551RLRPG


NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

2N5551RLRPG Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 80 @ 10mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 5mA, 50mA.Parts of this part have transition frequencies of 100MHz.This device displays a 160V maximum voltage - Collector Emitter Breakdown.

2N5551RLRPG Features


the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
a transition frequency of 100MHz


2N5551RLRPG Applications


There are a lot of Rochester Electronics, LLC
2N5551RLRPG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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