2N5551RLRP

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

625mW

Mounting Type :

Through Hole

Transistor Application :

AMPLIFIER

Current Rating :

600mA

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Collector Emitter Breakdown Voltage :

160V

Polarity/Channel Type :

NPN

Number of Pins :

3

Number of Terminations :

3

Voltage - Rated DC :

160V

Emitter Base Voltage (VEBO) :

6V

Collector Emitter Saturation Voltage :

250mV

Number of Elements :

1

Lead Free :

Contains Lead

Max Collector Current :

600mA

Frequency :

300MHz

Transition Frequency :

100MHz

Transistor Type :

NPN

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

BOTTOM

Pin Count :

3

Collector Base Voltage (VCBO) :

180V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e0

Published :

2006

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Element Configuration :

Single

Terminal Finish :

Tin/Lead (Sn/Pb)

Peak Reflow Temperature (Cel) :

240

Mount :

Through Hole

Base Part Number :

2N5551

Qualification Status :

Not Qualified

hFE Min :

80

Max Power Dissipation :

625mW

RoHS Status :

Non-RoHS Compliant

Reach Compliance Code :

not_compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

ECCN Code :

EAR99

Gain Bandwidth Product :

300MHz

Collector Emitter Voltage (VCEO) :

160V

Current - Collector Cutoff (Max) :

50nA ICBO

Transistor Element Material :

SILICON

Packaging :

Tape and Box (TB)