2N5551RLRMG
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- Mfr.Part #
- 2N5551RLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.6A TO92
- Stock
- 22,092
- In Stock ：
- 22,092
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- hFE Min :
- 80
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- HTS Code :
- 8541.21.00.95
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e1
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 180V
- Collector Emitter Breakdown Voltage :
- 160V
- Number of Terminations :
- 3
- Current Rating :
- 600mA
- Mount :
- Through Hole
- Max Collector Current :
- 600mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Emitter Base Voltage (VEBO) :
- 6V
- Gain Bandwidth Product :
- 300MHz
- Published :
- 2006
- Collector Emitter Voltage (VCEO) :
- 200mV
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Collector Emitter Saturation Voltage :
- 250mV
- Terminal Position :
- BOTTOM
- Packaging :
- Tape and Box (TB)
- RoHS Status :
- RoHS Compliant
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 160V
- Mounting Type :
- Through Hole
- JESD-30 Code :
- O-PBCY-T3
- Base Part Number :
- 2N5551
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 100MHz
- Max Power Dissipation :
- 625mW
- Element Configuration :
- Single
- Pin Count :
- 3
- Datasheets
- 2N5551RLRMG
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N5551RLRMG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 80 @ 10mA 5V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 5mA, 50mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.A transition frequency of 100MHz is present in the part.Collector current can be as low as 600mA volts at its maximum.
2N5551RLRMG Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5551RLRMG Applications
There are a lot of ON Semiconductor
2N5551RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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