2N5551RLRM

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

NPN

Peak Reflow Temperature (Cel) :

240

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Configuration :

Single

Power - Max :

625mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

50nA ICBO

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

O-PBCY-T3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Transition Frequency :

100MHz

Pin Count :

3

Qualification Status :

COMMERCIAL

Transistor Application :

AMPLIFIER

Terminal Finish :

TIN LEAD

Number of Terminations :

3

Polarity/Channel Type :

NPN

Terminal Position :

BOTTOM

Transistor Element Material :

SILICON

Frequency - Transition :

300MHz

Surface Mount :

No

Pbfree Code :

No

JESD-609 Code :

e0

Current - Collector (Ic) (Max) :

600mA

Number of Elements :

1

Voltage - Collector Emitter Breakdown (Max) :

160V

Mounting Type :

Through Hole

Packaging :

Tape and Box (TB)

RoHS Status :

Non-RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

30