2N5551RLRA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Mounting Type :

Through Hole

Current - Collector (Ic) (Max) :

600mA

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Polarity/Channel Type :

NPN

Surface Mount :

No

JESD-609 Code :

e0

Pbfree Code :

No

Voltage - Collector Emitter Breakdown (Max) :

160V

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

TIN LEAD

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Terminal Position :

BOTTOM

Configuration :

Single

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

RoHS Status :

Non-RoHS Compliant

Pin Count :

3

Frequency - Transition :

300MHz

Transistor Application :

AMPLIFIER

Qualification Status :

COMMERCIAL

Power - Max :

625mW

Peak Reflow Temperature (Cel) :

240

JESD-30 Code :

O-PBCY-T3

Transistor Element Material :

SILICON

Number of Terminations :

3

Current - Collector Cutoff (Max) :

50nA ICBO

Transistor Type :

NPN

Transition Frequency :

100MHz