2N5551RL1G
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- Mfr.Part #
- 2N5551RL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.6A TO92
- Stock
- 5,095
- In Stock ：
- 5,095
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 160V
- Current Rating :
- 600mA
- Transistor Application :
- AMPLIFIER
- JESD-609 Code :
- e1
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Transition Frequency :
- 100MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 250mV
- Base Part Number :
- 2N5551
- Number of Pins :
- 3
- Max Collector Current :
- 600mA
- Element Configuration :
- Single
- Pbfree Code :
- yes
- hFE Min :
- 80
- Frequency :
- 300MHz
- Collector Emitter Breakdown Voltage :
- 160V
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 300MHz
- Published :
- 2006
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Max Breakdown Voltage :
- 160V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Contact Plating :
- Copper, Silver, Tin
- Power Dissipation :
- 625mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Terminal Position :
- BOTTOM
- Transistor Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- EUROPEAN PART NUMBER
- Voltage - Rated DC :
- 160V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- RoHS Status :
- RoHS Compliant
- Collector Base Voltage (VCBO) :
- 180V
- Surface Mount :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 625mW
- Packaging :
- Tape and Reel (TR)
- Datasheets
- 2N5551RL1G
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N5551RL1G Overview
This device has a DC current gain of 80 @ 10mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 200mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 160V volts can be used.A maximum collector current of 600mA volts is possible.
2N5551RL1G Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5551RL1G Applications
There are a lot of ON Semiconductor
2N5551RL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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