2N5551RL1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

ECCN Code :

EAR99

Transition Frequency :

100MHz

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Collector Base Voltage (VCBO) :

180V

Voltage - Rated DC :

160V

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

625mW

Polarity/Channel Type :

NPN

Additional Feature :

EUROPEAN PART NUMBER

Peak Reflow Temperature (Cel) :

240

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Mounting Type :

Through Hole

Transistor Type :

NPN

Number of Terminations :

3

Transistor Element Material :

SILICON

JESD-609 Code :

e0

Collector Emitter Saturation Voltage :

250mV

HTS Code :

8541.21.00.95

Pin Count :

3

Terminal Finish :

Tin/Lead (Sn/Pb)

Current - Collector Cutoff (Max) :

50nA ICBO

Current Rating :

600mA

hFE Min :

80

Reach Compliance Code :

not_compliant

Published :

2006

Qualification Status :

Not Qualified

Terminal Position :

BOTTOM

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Emitter Base Voltage (VEBO) :

6V

Lead Free :

Contains Lead

Gain Bandwidth Product :

300MHz

Element Configuration :

Single

RoHS Status :

Non-RoHS Compliant

Transistor Application :

AMPLIFIER

Max Collector Current :

600mA

JESD-30 Code :

O-PBCY-T3

Collector Emitter Breakdown Voltage :

160V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

2N5551

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Collector Emitter Voltage (VCEO) :

200mV

Time@Peak Reflow Temperature-Max (s) :

30