2N5551CBU

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Mfr.Part #
2N5551CBU
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN 160V 0.6A TO92-3
Stock
32,791
In Stock :
32,791

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Base Part Number :
2N5551
Packaging :
Bulk
Current - Collector Cutoff (Max) :
50nA ICBO
Frequency - Transition :
100MHz
Power - Max :
625mW
Voltage - Collector Emitter Breakdown (Max) :
160V
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA 5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature :
-55°C~150°C TJ
Vce Saturation (Max) @ Ib, Ic :
200mV @ 5mA, 50mA
Transistor Type :
NPN
Current - Collector (Ic) (Max) :
600mA
Datasheets
2N5551CBU
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N5551CBU from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2N5551, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Operating Temperature:-55°C~150°C TJ, 2N5551CBU pinout, 2N5551CBU datasheet PDF, 2N5551CBU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N5551CBU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N5551CBU


NPN -55°C~150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

2N5551CBU Overview


DC current gain in this device equals 80 @ 10mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 200mV @ 5mA, 50mA.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

2N5551CBU Features


the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA


2N5551CBU Applications


There are a lot of ON Semiconductor
2N5551CBU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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