2N5551BU
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- Mfr.Part #
- 2N5551BU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- 2N5551 - SMALL SIGNAL BIPOLAR TR
- Stock
- 93,949
- In Stock ：
- 93,949
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Length :
- 5.2mm
- Published :
- 2007
- Gain Bandwidth Product :
- 300MHz
- Number of Elements :
- 1
- Power Dissipation :
- 625mW
- Height :
- 5.33mm
- Number of Pins :
- 3
- Frequency - Transition :
- 100MHz
- Packaging :
- Bulk
- Width :
- 4.19mm
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 160V
- Transistor Type :
- NPN
- Weight :
- 179mg
- Max Collector Current :
- 600mA
- Max Power Dissipation :
- 625mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Transistor Application :
- AMPLIFIER
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Base Part Number :
- 2N5551
- Voltage - Rated DC :
- 160V
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 200mV
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Transition Frequency :
- 100MHz
- Factory Lead Time :
- 7 Weeks
- Radiation Hardening :
- No
- hFE Min :
- 80
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Current Rating :
- 600mA
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 160V
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 180V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Terminal Position :
- BOTTOM
- Contact Plating :
- Tin
- Datasheets
- 2N5551BU
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N5551BU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 80 @ 10mA 5V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.When collector current reaches its maximum, it can reach 600mA volts.
2N5551BU Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5551BU Applications
There are a lot of ON Semiconductor
2N5551BU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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