2N5551-BP
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- Mfr.Part #
- 2N5551-BP
- Manufacturer
- Micro Commercial Components (MCC)
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.6A TO92
- Stock
- 35,998
- In Stock ：
- 35,998
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- Manufacturer :
- Micro Commercial Components (MCC)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Pin Count :
- 3
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 100MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 160V
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Terminal Finish :
- Matte Tin (Sn)
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- JESD-609 Code :
- e3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power - Max :
- 625mW
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- AMPLIFIER
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Frequency - Transition :
- 300MHz
- Terminal Position :
- BOTTOM
- JESD-30 Code :
- O-PBCY-T3
- Current - Collector (Ic) (Max) :
- 600mA
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Datasheets
- 2N5551-BP
,TO-226_bentlead.jpg)
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Through Hole
2N5551-BP Overview
In this device, the DC current gain is 80 @ 10mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 50mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.There is a 160V maximal voltage in the device due to collector-emitter breakdown.
2N5551-BP Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
a transition frequency of 100MHz
2N5551-BP Applications
There are a lot of Micro Commercial Co
2N5551-BP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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