2N5551
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- Mfr.Part #
- 2N5551
- Manufacturer
- onsemi
- Package / Case
- TO-92
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.6A TO92
- Stock
- 30,203
- In Stock ：
- 30,203
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Transistor Application :
- AMPLIFIER
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 2012
- Packaging :
- Bulk
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- HTS Code :
- 8541.21.00.95
- Collector Emitter Voltage (VCEO) :
- 200mV
- Transition Frequency :
- 100MHz
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Max Operating Temperature :
- 150°C
- JESD-609 Code :
- e0
- Collector Emitter Breakdown Voltage :
- 160V
- Continuous Collector Current :
- 600mA
- Polarity :
- NPN
- JESD-30 Code :
- O-PBCY-T3
- Factory Lead Time :
- 8 Weeks
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 200mV
- Max Collector Current :
- 600mA
- Min Operating Temperature :
- -65°C
- DC Current Gain-Min (hFE) :
- 80
- Frequency - Transition :
- 300MHz
- Collector Base Voltage (VCBO) :
- 180V
- Package / Case :
- TO-92
- Gain Bandwidth Product :
- 300MHz
- hFE Min :
- 80
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 625mW
- Qualification Status :
- Not Qualified
- Pbfree Code :
- No
- Element Configuration :
- Single
- RoHS Status :
- RoHS Compliant
- Datasheets
- 2N5551
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1 Elements 3 Terminations TO-92 Bulk
2N5551 Overview
Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.Single BJT transistor is recommended to keep the continuous collector voltage at 600mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
2N5551 Features
a collector emitter saturation voltage of 200mV
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
2N5551 Applications
There are a lot of Central Semiconductor
2N5551 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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