2N5551,412

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

3

Collector-Base Capacitance-Max :

6pF

Pin Count :

3

Surface Mount :

No

Transistor Application :

SWITCHING

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Transistor Element Material :

SILICON

Base Part Number :

2N5551

Packaging :

Tube

Terminal Position :

BOTTOM

Transition Frequency :

100MHz

Qualification Status :

Not Qualified

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

160V

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

VCEsat-Max :

0.2 V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

630mW

JESD-30 Code :

O-PBCY-T3

Terminal Finish :

Matte Tin (Sn)

HTS Code :

8541.21.00.95

Frequency - Transition :

300MHz

Number of Elements :

1

Current - Collector (Ic) (Max) :

300mA

Current - Collector Cutoff (Max) :

50nA ICBO

Transistor Type :

NPN

Configuration :

Single

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Mounting Type :

Through Hole

Power Dissipation-Max (Abs) :

0.35W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED