2N5550TFR
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- Mfr.Part #
- 2N5550TFR
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 140V 0.6A TO92-3
- Stock
- 559
- In Stock ：
- 559
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Terminations :
- 3
- Factory Lead Time :
- 6 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 250mV
- Base Part Number :
- 2N5550
- Element Configuration :
- Single
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Frequency :
- 300MHz
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 50mA
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 140V
- Weight :
- 240mg
- Transition Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Width :
- 3.86mm
- Height :
- 4.58mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Application :
- AMPLIFIER
- Published :
- 2000
- Lifecycle Status :
- ACTIVE (Last Updated: 21 hours ago)
- Number of Pins :
- 3
- Length :
- 4.58mm
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Gain Bandwidth Product :
- 300MHz
- Voltage - Rated DC :
- 140V
- Collector Emitter Breakdown Voltage :
- 140V
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Current Rating :
- 600mA
- hFE Min :
- 60
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 160V
- Power Dissipation :
- 625mW
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 140V
- Max Collector Current :
- 600mA
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 625mW
- Pbfree Code :
- yes
- Datasheets
- 2N5550TFR
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N5550TFR Overview
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 250mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 140V volts can be used.A maximum collector current of 600mA volts is possible.
2N5550TFR Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5550TFR Applications
There are a lot of ON Semiconductor
2N5550TFR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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