2N5550TF

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Mfr.Part #
2N5550TF
Manufacturer
Fairchild Semiconductor
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 140V 0.6A TO92-3
Stock
424
In Stock :
424

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Base Part Number :
2N5550
Frequency :
300MHz
Current Rating :
600mA
Factory Lead Time :
6 Weeks
Lead Free :
Lead Free
Terminal Position :
BOTTOM
Transistor Type :
NPN
Pbfree Code :
yes
Collector Emitter Saturation Voltage :
250mV
JESD-609 Code :
e3
Collector Base Voltage (VCBO) :
160V
Height :
4.58mm
Mounting Type :
Through Hole
Terminal Finish :
Tin (Sn)
Radiation Hardening :
No
Power Dissipation :
625mW
Weight :
240mg
Current - Collector Cutoff (Max) :
100nA ICBO
Emitter Base Voltage (VEBO) :
6V
Transistor Element Material :
SILICON
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
140V
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Application :
AMPLIFIER
Voltage - Rated DC :
140V
Packaging :
Tape and Reel (TR)
Transition Frequency :
100MHz
Vce Saturation (Max) @ Ib, Ic :
250mV @ 5mA, 50mA
Lifecycle Status :
ACTIVE (Last Updated: 21 hours ago)
Mount :
Through Hole
Max Power Dissipation :
625mW
Element Configuration :
Single
Max Breakdown Voltage :
140V
Collector Emitter Voltage (VCEO) :
140V
Operating Temperature :
150°C TJ
Polarity/Channel Type :
NPN
ECCN Code :
EAR99
Length :
4.58mm
Number of Pins :
3
Number of Elements :
1
hFE Min :
60
Width :
3.86mm
Max Collector Current :
600mA
RoHS Status :
ROHS3 Compliant
Gain Bandwidth Product :
300MHz
Published :
2000
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 10mA 5V
Datasheets
2N5550TF
Introducing Transistors - Bipolar (BJT) - Single Fairchild Semiconductor 2N5550TF from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2N5550, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Operating Temperature:150°C TJ, Number of Pins:3, 2N5550TF pinout, 2N5550TF datasheet PDF, 2N5550TF amp .Beyond Transistors - Bipolar (BJT) - Single Fairchild Semiconductor 2N5550TF ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor 2N5550TF


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole

2N5550TFR Overview


This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 250mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 140V volts can be used.A maximum collector current of 600mA volts is possible.

2N5550TFR Features


the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz


2N5550TFR Applications


There are a lot of ON Semiconductor
2N5550TFR applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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