2N5550TF
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- Mfr.Part #
- 2N5550TF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 140V 0.6A TO92-3
- Stock
- 424
- In Stock ：
- 424
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Frequency :
- 300MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 600mA
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 21 hours ago)
- hFE Min :
- 60
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 160V
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 140V
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 140V
- Weight :
- 240mg
- Current Rating :
- 600mA
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Width :
- 3.86mm
- Factory Lead Time :
- 6 Weeks
- Published :
- 2000
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 50mA
- Emitter Base Voltage (VEBO) :
- 6V
- Height :
- 4.58mm
- Collector Emitter Breakdown Voltage :
- 140V
- Collector Emitter Saturation Voltage :
- 250mV
- Length :
- 4.58mm
- Number of Pins :
- 3
- Base Part Number :
- 2N5550
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power Dissipation :
- 625mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 300MHz
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 625mW
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 140V
- Transition Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2N5550TF
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N5550TFR Overview
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 250mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 140V volts can be used.A maximum collector current of 600mA volts is possible.
2N5550TFR Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5550TFR Applications
There are a lot of ON Semiconductor
2N5550TFR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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