2N5550RLRP

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Voltage - Collector Emitter Breakdown (Max) :

140V

JESD-609 Code :

e1

Peak Reflow Temperature (Cel) :

260

Frequency - Transition :

300MHz

Mounting Type :

Through Hole

Power - Max :

625mW

Configuration :

Single

Polarity/Channel Type :

NPN

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 50mA

Transistor Type :

NPN

Terminal Finish :

TIN SILVER COPPER

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 5V

Packaging :

Tape and Box (TB)

Reach Compliance Code :

Unknown

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Number of Terminations :

3

Terminal Position :

BOTTOM

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

O-PBCY-T3

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

100nA ICBO

Pbfree Code :

yes

Transition Frequency :

100MHz

Surface Mount :

No

Qualification Status :

COMMERCIAL

Transistor Application :

AMPLIFIER

Current - Collector (Ic) (Max) :

600mA