2N5550RLRAG
- Mfr.Part #
- 2N5550RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 140V 0.6A TO92
- Stock
- 35,992
- In Stock :
- 35,992
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- NPN
- Frequency - Transition :
- 300MHz
- Terminal Finish :
- TIN SILVER COPPER
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 50mA
- Transistor Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Qualification Status :
- COMMERCIAL
- Transition Frequency :
- 100MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 140V
- RoHS Status :
- ROHS3 Compliant
- Current - Collector (Ic) (Max) :
- 600mA
- Pin Count :
- 3
- Surface Mount :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power - Max :
- 625mW
- JESD-609 Code :
- e1
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- O-PBCY-T3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Mounting Type :
- Through Hole
- Configuration :
- Single
- Datasheets
- 2N5550RLRAG

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N5550RLRAG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 60 @ 10mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 5mA, 50mA.A transition frequency of 100MHz is present in the part.A 140V maximal voltage - Collector Emitter Breakdown is present in the device.
2N5550RLRAG Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
a transition frequency of 100MHz
2N5550RLRAG Applications
There are a lot of Rochester Electronics, LLC
2N5550RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
Manufacturer related products
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| 2N5539 | onsemi | 18,153 | POWER BJT |
| 2N5540 | onsemi | 49,546 | POWER BJT |
| 2N5541 | onsemi | 25,623 | POWER BJT |
| 2N5542 | onsemi | 37,379 | POWER BJT |
| 2N5545 | onsemi | 2,127 | JFET - DUAL |
| 2N5545JTX01 | onsemi | 21,506 | JFET N-CH 50V TO-71 |
| 2N5545JTXL01 | onsemi | 7,389 | JFET N-CH 50V TO-71 |
| 2N5545JTXV01 | onsemi | 7,258 | JFET N-CH 50V TO-71 |
| 2N5546 | onsemi | 26,249 | JFET - DUAL |
| 2N5546JTX01 | onsemi | 17,480 | JFET N-CH 50V TO-71 |
| 2N5546JTXL01 | onsemi | 19,213 | JFET N-CH 50V TO-71 |
| 2N5546JTXV01 | onsemi | 17,608 | JFET N-CH 50V TO-71 |
| 2N5547 | onsemi | 16,543 | JFET - DUAL |
| 2N5547JTX01 | onsemi | 38,483 | JFET N-CH 50V TO-71 |
| 2N5547JTXL01 | onsemi | 7,339 | JFET N-CH 50V TO-71 |
















