2N5550RLRAG

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Mfr.Part #
2N5550RLRAG
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 140V 0.6A TO92
Stock
35,992
In Stock :
35,992

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Transistor Application :
AMPLIFIER
Polarity/Channel Type :
NPN
Frequency - Transition :
300MHz
Terminal Finish :
TIN SILVER COPPER
Current - Collector Cutoff (Max) :
100nA ICBO
Transistor Element Material :
SILICON
Terminal Position :
BOTTOM
Number of Terminations :
3
Vce Saturation (Max) @ Ib, Ic :
250mV @ 5mA, 50mA
Transistor Type :
NPN
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Qualification Status :
COMMERCIAL
Transition Frequency :
100MHz
Voltage - Collector Emitter Breakdown (Max) :
140V
RoHS Status :
ROHS3 Compliant
Current - Collector (Ic) (Max) :
600mA
Pin Count :
3
Surface Mount :
No
Time@Peak Reflow Temperature-Max (s) :
40
Power - Max :
625mW
JESD-609 Code :
e1
Peak Reflow Temperature (Cel) :
260
Packaging :
Tape and Reel (TR)
JESD-30 Code :
O-PBCY-T3
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 10mA 5V
Mounting Type :
Through Hole
Configuration :
Single
Datasheets
2N5550RLRAG
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N5550RLRAG from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Mounting Type:Through Hole, 2N5550RLRAG pinout, 2N5550RLRAG datasheet PDF, 2N5550RLRAG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N5550RLRAG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N5550RLRAG


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole

2N5550RLRAG Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 60 @ 10mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 5mA, 50mA.A transition frequency of 100MHz is present in the part.A 140V maximal voltage - Collector Emitter Breakdown is present in the device.

2N5550RLRAG Features


the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
a transition frequency of 100MHz


2N5550RLRAG Applications


There are a lot of Rochester Electronics, LLC
2N5550RLRAG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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