2N5550BU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Voltage - Collector Emitter Breakdown (Max) :

140V

JESD-609 Code :

e3

Current - Collector (Ic) (Max) :

600mA

Transition Frequency :

100MHz

Power - Max :

625mW

Configuration :

Single

Current - Collector Cutoff (Max) :

100nA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

MATTE TIN

Packaging :

Bulk

Pbfree Code :

yes

Pin Count :

3

Transistor Element Material :

SILICON

Surface Mount :

No

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 5V

Polarity/Channel Type :

NPN

Number of Terminations :

3

Terminal Position :

BOTTOM

Transistor Application :

AMPLIFIER

Operating Temperature :

150°C TJ

Qualification Status :

COMMERCIAL

Transistor Type :

NPN

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

RoHS Status :

ROHS3 Compliant

Frequency - Transition :

300MHz

Peak Reflow Temperature (Cel) :

Not Applicable

JESD-30 Code :

O-PBCY-T3

Mounting Type :

Through Hole