2N5416S

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Voltage - Collector Emitter Breakdown (Max) :

300 V

Current - Collector Cutoff (Max) :

50μA

Polarity/Channel Type :

PNP

JESD-609 Code :

e4

Package :

Bulk

Reach Compliance Code :

Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 50mA, 10V

Frequency - Transition :

-

ECCN Code :

EAR99

Transistor Type :

PNP

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

HTS Code :

8541.21.00.95

Product Status :

Active

Qualification Status :

Not Qualified

Package / Case :

TO-205AD, TO-39-3 Metal Can

Collector Current-Max (IC) :

1 A

Current - Collector (Ic) (Max) :

50 µA

Number of Elements :

1

Pbfree Code :

yes

Mounting Type :

Through Hole

Collector-Emitter Voltage-Max :

200 V

Vce Saturation (Max) @ Ib, Ic :

2V @ 5mA, 50mA

Number of Terminals :

3

Terminal Finish :

Gold (Au)

Transistor Application :

AMPLIFIER

Supplier Device Package :

TO-39 (TO-205AD)

Operating Temperature :

-65°C ~ 200°C (TJ)

Surface Mount :

No

DC Current Gain-Min (hFE) :

30

Transistor Element Material :

SILICON

Power Dissipation-Max (Abs) :

10 W

Terminal Form :

Wire

Terminal Position :

BOTTOM

JEDEC-95 Code :

TO-39

Series :

-

JESD-30 Code :

O-MBCY-W3

Configuration :

Single

Package Shape :

Round

Power - Max :

750 mW