2N5408

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Mfr.Part #
2N5408
Manufacturer
Microchip Technology
Package / Case
TO-111-4, Stud
Datasheet
Download
Description
POWER BJT
Stock
35,482
In Stock :
35,482

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-111-4, Stud
Vce Saturation (Max) @ Ib, Ic :
-
Current - Collector (Ic) (Max) :
5 A
Product Status :
Active
Power - Max :
52 W
Number of Terminals :
4
JESD-30 Code :
O-MUPM-D4
Number of Elements :
1
Technology :
Si
Collector-Emitter Voltage-Max :
80 V
Mounting Type :
Stud Mount
Package :
Bulk
Transistor Element Material :
SILICON
Transistor Polarity :
PNP
Package Shape :
Round
Supplier Device Package :
TO-111
VCEsat-Max :
0.6 V
Product Category :
Bipolar Transistors - BJT
Product Type :
BJTs - Bipolar Transistors
Polarity/Channel Type :
PNP
Terminal Position :
UPPER
Power Dissipation-Max (Abs) :
30 W
Terminal Form :
Solder Lug
Manufacturer :
Microchip
Series :
-
Case Connection :
Isolated
Subcategory :
Transistors
Voltage - Collector Emitter Breakdown (Max) :
80 V
Frequency - Transition :
-
Brand :
Microchip Technology
DC Current Gain (hFE) (Min) @ Ic, Vce :
-
ECCN Code :
EAR99
Reach Compliance Code :
Compliant
Transistor Type :
PNP
Surface Mount :
No
Collector Current-Max (IC) :
5 A
JEDEC-95 Code :
TO-111
DC Current Gain-Min (hFE) :
20
Current - Collector Cutoff (Max) :
-
Configuration :
Single
Operating Temperature :
-65°C ~ 200°C (TJ)
Qualification Status :
Not Qualified
Datasheets
2N5408
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N5408 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-111-4, Stud, Mounting Type:Stud Mount, Operating Temperature:-65°C ~ 200°C (TJ), 2N5408 pinout, 2N5408 datasheet PDF, 2N5408 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N5408 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -65°C ~ 200°C (TJ) - 1 Elements SILICON PNP TO-111-4, Stud Stud Mount

2N5408 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is -.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is -.The product comes in the supplier device package of TO-111.There is a setting of 80 V for maximal collector-Emitter voltage.A 80 V maximal voltage - Collector Emitter Breakdown is present in the device.

2N5408 Features


the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-111


2N5408 Applications


There are a lot of Microchip Technology
2N5408 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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