2N5406

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Mfr.Part #
2N5406
Manufacturer
Microchip Technology
Package / Case
TO-205AA, TO-5-3 Metal Can
Datasheet
Download
Description
POWER BJT
Stock
19,134
In Stock :
19,134

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Operating Temperature :
-65°C ~ 200°C (TJ)
Surface Mount :
No
Voltage - Collector Emitter Breakdown (Max) :
80 V
Polarity/Channel Type :
PNP
Current - Collector (Ic) (Max) :
5 A
Current - Collector Cutoff (Max) :
-
Power - Max :
7 W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Reach Compliance Code :
Compliant
Terminal Position :
BOTTOM
Supplier Device Package :
TO-5AA
Technology :
Si
DC Current Gain-Min (hFE) :
40
Vce Saturation (Max) @ Ib, Ic :
600mV @ 200μA, 2mA
Qualification Status :
Not Qualified
DC Current Gain (hFE) (Min) @ Ic, Vce :
-
Series :
-
Package :
Bulk
ECCN Code :
EAR99
Terminal Form :
Wire
Product Type :
BJTs - Bipolar Transistors
JESD-30 Code :
O-MBCY-W3
Transistor Application :
SWITCHING
Package / Case :
TO-205AA, TO-5-3 Metal Can
Mounting Type :
Through Hole
Transistor Type :
PNP
Pin Count :
3
Subcategory :
Transistors
Collector Current-Max (IC) :
5 A
Transistor Polarity :
PNP
Brand :
Microchip Technology
Configuration :
Single
Product Status :
Active
Pbfree Code :
No
Frequency - Transition :
-
Manufacturer :
Microchip
Product Category :
Bipolar Transistors - BJT
Number of Elements :
1
Collector-Emitter Voltage-Max :
80 V
Package Shape :
Round
Number of Terminals :
3
JEDEC-95 Code :
TO-5
Datasheets
2N5406
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N5406 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C ~ 200°C (TJ), Package / Case:TO-205AA, TO-5-3 Metal Can, Mounting Type:Through Hole, 2N5406 pinout, 2N5406 datasheet PDF, 2N5406 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N5406 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -65°C ~ 200°C (TJ) - 1 Elements SILICON PNP TO-205AA, TO-5-3 Metal Can Through Hole

2N5406 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is -.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 200μA, 2mA.The product comes in the supplier device package of TO-5AA.There is a setting of 80 V for maximal collector-Emitter voltage.A 80 V maximal voltage - Collector Emitter Breakdown is present in the device.

2N5406 Features


the DC current gain for this device is -
the vce saturation(Max) is 600mV @ 200μA, 2mA
the supplier device package of TO-5AA


2N5406 Applications


There are a lot of Microchip Technology
2N5406 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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