2N5401ZL1G
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- Mfr.Part #
- 2N5401ZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.6A TO92
- Stock
- 16,381
- In Stock ：
- 16,381
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 625mW
- Transistor Type :
- PNP
- Gain Bandwidth Product :
- 300MHz
- hFE Min :
- 50
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Current - Collector (Ic) (Max) :
- 600mA
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- ECCN Code :
- EAR99
- HTS Code :
- 8541.21.00.95
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Lead Free :
- Lead Free
- Transition Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Packaging :
- Tape and Box (TB)
- RoHS Status :
- RoHS Compliant
- Terminal Position :
- BOTTOM
- Reach Compliance Code :
- Unknown
- JESD-609 Code :
- e1
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 160V
- Additional Feature :
- EUROPEAN PART NUMBER
- Collector Emitter Saturation Voltage :
- 500mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- JESD-30 Code :
- O-PBCY-T3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Collector Emitter Voltage (VCEO) :
- 500mV
- Collector Emitter Breakdown Voltage :
- 150V
- Transistor Application :
- AMPLIFIER
- Voltage - Rated DC :
- -150V
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Base Part Number :
- 2N5401
- Published :
- 2005
- Max Collector Current :
- 600mA
- Current Rating :
- -600mA
- Datasheets
- 2N5401ZL1G
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N5401ZL1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 10mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 600mA volts.
2N5401ZL1G Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 100MHz
2N5401ZL1G Applications
There are a lot of ON Semiconductor
2N5401ZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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