2N5401YBU
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- Mfr.Part #
- 2N5401YBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.6A TO92-3
- Stock
- 60,869
- In Stock ：
- 60,869
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2012
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Max Collector Current :
- 600mA
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Frequency :
- 400MHz
- Voltage - Rated DC :
- -160V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 150V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- PNP
- Current Rating :
- -600mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Factory Lead Time :
- 6 Weeks
- Base Part Number :
- 2N5401
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Power Dissipation :
- 625mW
- Collector Base Voltage (VCBO) :
- 160V
- ECCN Code :
- EAR99
- Weight :
- 179mg
- Packaging :
- Bulk
- Max Power Dissipation :
- 625mW
- Collector Emitter Voltage (VCEO) :
- 150V
- Terminal Position :
- BOTTOM
- Gain Bandwidth Product :
- 400MHz
- Mounting Type :
- Through Hole
- Transition Frequency :
- 100MHz
- Pbfree Code :
- yes
- Datasheets
- 2N5401YBU
,TO-226_straightlead.jpg)
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N5401YBU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 10mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.When collector current reaches its maximum, it can reach 600mA volts.
2N5401YBU Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 100MHz
2N5401YBU Applications
There are a lot of ON Semiconductor
2N5401YBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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