2N5401TFR
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- Mfr.Part #
- 2N5401TFR
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.6A TO92-3
- Stock
- 44,984
- In Stock ：
- 44,984
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 178.2mg
- Max Operating Temperature :
- 150°C
- Gain Bandwidth Product :
- 300MHz
- Polarity :
- PNP
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- -160V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Collector Emitter Voltage (VCEO) :
- 500mV
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Supplier Device Package :
- TO-92-3
- Max Power Dissipation :
- 625mW
- Emitter Base Voltage (VEBO) :
- -5V
- Max Collector Current :
- 600mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Current - Collector (Ic) (Max) :
- 600mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Voltage - Rated DC :
- -160V
- Number of Pins :
- 3
- Frequency :
- 400MHz
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Power Dissipation :
- 625mW
- Collector Emitter Breakdown Voltage :
- 150V
- Transistor Type :
- PNP
- Base Part Number :
- 2N5401
- Voltage - Collector Emitter Breakdown (Max) :
- 150V
- Element Configuration :
- Single
- Power - Max :
- 625mW
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Frequency - Transition :
- 400MHz
- hFE Min :
- 60
- Current Rating :
- -600mA
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- 2N5401TFR
PNP -55°C~150°C TJ 50nA ICBO 1 Elements TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N5401TFR Overview
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Product package TO-92-3 comes from the supplier.Collector Emitter Breakdown occurs at 150VV - Maximum voltage.A maximum collector current of 600mA volts is possible.
2N5401TFR Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
the supplier device package of TO-92-3
2N5401TFR Applications
There are a lot of ON Semiconductor
2N5401TFR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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