2N5401TF
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- Mfr.Part #
- 2N5401TF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.6A TO92-3
- Stock
- 3,807
- In Stock ：
- 3,807
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 150V
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 150V
- Polarity :
- PNP
- Collector Base Voltage (VCBO) :
- 160V
- Base Part Number :
- 2N5401
- Weight :
- 178.2mg
- Collector Emitter Voltage (VCEO) :
- 150V
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Current Rating :
- -600mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Operating Temperature :
- 150°C
- Power - Max :
- 625mW
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- PNP
- Frequency :
- 400MHz
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 600mA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- hFE Min :
- 60
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Voltage - Rated DC :
- -160V
- Current - Collector (Ic) (Max) :
- 600mA
- Max Frequency :
- 400MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Frequency - Transition :
- 400MHz
- Min Operating Temperature :
- -55°C
- Max Power Dissipation :
- 625mW
- Power Dissipation :
- 625mW
- Gain Bandwidth Product :
- 300MHz
- Supplier Device Package :
- TO-92-3
- Datasheets
- 2N5401TF
PNP -55°C~150°C TJ 50nA ICBO 1 Elements TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N5401TF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 10mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.TO-92-3 is the supplier device package for this product.This device displays a 150V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 600mA volts.
2N5401TF Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
the supplier device package of TO-92-3
2N5401TF Applications
There are a lot of ON Semiconductor
2N5401TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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