2N5401TAR

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

60

Base Part Number :

2N5401

Power - Max :

625mW

Transistor Type :

PNP

Weight :

178.2mg

Power Dissipation :

625mW

Max Collector Current :

600mA

RoHS Status :

RoHS Compliant

Current Rating :

-600mA

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Collector Base Voltage (VCBO) :

-160V

Frequency :

400MHz

Min Operating Temperature :

-55°C

Supplier Device Package :

TO-92-3

Polarity :

PNP

Current - Collector (Ic) (Max) :

600mA

Voltage - Collector Emitter Breakdown (Max) :

150V

Mounting Type :

Through Hole

Emitter Base Voltage (VEBO) :

-5V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Max Operating Temperature :

150°C

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Mount :

Through Hole

Gain Bandwidth Product :

300MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

50nA ICBO

Max Power Dissipation :

625mW

Element Configuration :

Single

Voltage - Rated DC :

-160V

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 5V

Frequency - Transition :

400MHz

Collector Emitter Voltage (VCEO) :

500mV

Packaging :

Tape and Box (TB)

Collector Emitter Breakdown Voltage :

150V

Number of Pins :

3