2N5401RLRAG
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- Mfr.Part #
- 2N5401RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.6A TO92
- Stock
- 7,782
- In Stock ：
- 7,782
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 100MHz
- Max Power Dissipation :
- 625mW
- Height :
- 5.33mm
- Frequency :
- 300MHz
- Collector Base Voltage (VCBO) :
- 160V
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 300MHz
- Voltage - Rated DC :
- -150V
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- PNP
- Base Part Number :
- 2N5401
- hFE Min :
- 50
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- JESD-609 Code :
- e1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- RoHS Status :
- RoHS Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 150V
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Max Collector Current :
- 600mA
- Number of Terminations :
- 3
- Published :
- 2005
- Packaging :
- Cut Tape (CT)
- Number of Elements :
- 1
- REACH SVHC :
- Unknown
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- No
- Max Breakdown Voltage :
- 150V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Element Configuration :
- Single
- Weight :
- 4.535924g
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- -600mA
- Pbfree Code :
- yes
- Width :
- 4.19mm
- Collector Emitter Voltage (VCEO) :
- 150V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Power Dissipation :
- 625mW
- Number of Pins :
- 3
- Length :
- 5.2mm
- Collector Emitter Saturation Voltage :
- 500mV
- Datasheets
- 2N5401RLRAG
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Cut Tape (CT) Through Hole
2N5401RLRAG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 60 @ 10mA 5V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -600mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 150V volts that it can take.Collector current can be as low as 600mA volts at its maximum.
2N5401RLRAG Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 100MHz
2N5401RLRAG Applications
There are a lot of ON Semiconductor
2N5401RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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