2N5401RL1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

160V

Current - Collector Cutoff (Max) :

50nA ICBO

Surface Mount :

No

Max Power Dissipation :

625mW

Transistor Element Material :

SILICON

Number of Elements :

1

Reach Compliance Code :

Unknown

Collector Emitter Saturation Voltage :

500mV

Terminal Position :

BOTTOM

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

PNP

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

150V

Base Part Number :

2N5401

Mounting Type :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 5V

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Type :

PNP

Current - Collector (Ic) (Max) :

600mA

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Transistor Application :

AMPLIFIER

Number of Terminations :

3

Additional Feature :

EUROPEAN PART NUMBER

hFE Min :

50

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

5V

Transition Frequency :

100MHz

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Voltage - Rated DC :

-150V

Max Collector Current :

600mA

Collector Emitter Voltage (VCEO) :

500mV

Published :

2005

Operating Temperature :

-55°C~150°C TJ

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

HTS Code :

8541.21.00.95

Gain Bandwidth Product :

300MHz

Pin Count :

3

Current Rating :

-600mA

JESD-609 Code :

e1

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified