2N5401_J05Z
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- Mfr.Part #
- 2N5401_J05Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.6A TO92-3
- Stock
- 7,181
- In Stock ：
- 7,181
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- PNP
- Supplier Device Package :
- TO-92-3
- Voltage - Collector Emitter Breakdown (Max) :
- 150V
- Base Part Number :
- 2N5401
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Packaging :
- Bulk
- Power - Max :
- 625mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Current - Collector (Ic) (Max) :
- 600mA
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 400MHz
- Datasheets
- 2N5401_J05Z
,TO-226_straightlead.jpg)
PNP -55°C~150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N5401_J05Z Overview
In this device, the DC current gain is 60 @ 10mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 50mA.Product comes in the supplier's device package TO-92-3.There is a 150V maximal voltage in the device due to collector-emitter breakdown.
2N5401_J05Z Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the supplier device package of TO-92-3
2N5401_J05Z Applications
There are a lot of ON Semiconductor
2N5401_J05Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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