2N5401-AP
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- Mfr.Part #
- 2N5401-AP
- Manufacturer
- Micro Commercial Components (MCC)
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.6A TO92
- Stock
- 23,828
- In Stock ：
- 23,828
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- Manufacturer :
- Micro Commercial Components (MCC)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 8 Weeks
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Published :
- 2008
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Matte Tin (Sn)
- Frequency - Transition :
- 100MHz
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- Single
- Power - Max :
- 1.5W
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 100MHz
- Surface Mount :
- No
- JESD-30 Code :
- O-PBCY-T3
- Current - Collector (Ic) (Max) :
- 600mA
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Packaging :
- Bulk
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- BOTTOM
- Voltage - Collector Emitter Breakdown (Max) :
- 150V
- Datasheets
- 2N5401-AP
,TO-226_bentlead.jpg)
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Bulk Through Hole
2N5401-AP Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 10mA 5V.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 100MHz.The device has a 150V maximal voltage - Collector Emitter Breakdown.
2N5401-AP Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
a transition frequency of 100MHz
2N5401-AP Applications
There are a lot of Micro Commercial Co
2N5401-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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