2N5366_D75Z
- Mfr.Part #
- 2N5366_D75Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.5A TO92-3
- Stock
- 23,168
- In Stock :
- 23,168
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- 2N5366
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 30mA, 300mA
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 1V
- Current - Collector (Ic) (Max) :
- 500mA
- Power - Max :
- 625mW
- Packaging :
- Tape and Box (TB)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Current - Collector Cutoff (Max) :
- 100nA
- Datasheets
- 2N5366_D75Z

PNP -55°C~150°C TJ 100nA TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N5366_D75Z Overview
In this device, the DC current gain is 100 @ 50mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 30mA, 300mA.The device exhibits a collector-emitter breakdown at 40V.
2N5366_D75Z Features
the DC current gain for this device is 100 @ 50mA 1V
the vce saturation(Max) is 1V @ 30mA, 300mA
2N5366_D75Z Applications
There are a lot of ON Semiconductor
2N5366_D75Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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