2N5339T3
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- Mfr.Part #
- 2N5339T3
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 27,369
- In Stock ：
- 27,369
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 500mA, 5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 2A, 2V
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-39 (TO-205AD)
- Product Type :
- BJTs - Bipolar Transistors
- Package :
- Bulk
- Power - Max :
- 1 W
- Series :
- -
- Product Status :
- Active
- Operating Temperature :
- -55°C ~ 200°C
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Current - Collector Cutoff (Max) :
- 100μA
- Manufacturer :
- Microchip
- Brand :
- Microchip Technology
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 5 A
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Frequency - Transition :
- -
- Product Category :
- Bipolar Transistors - BJT
- Subcategory :
- Transistors
- Datasheets
- 2N5339T3
NPN -55°C ~ 200°C 100μA TO-205AD, TO-39-3 Metal Can Through Hole
2N5339T3 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 2A, 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 500mA, 5A.This product comes in a TO-39 (TO-205AD) device package from the supplier.Device displays Collector Emitter Breakdown (100 V maximal voltage).
2N5339T3 Features
the DC current gain for this device is 60 @ 2A, 2V
the vce saturation(Max) is 1.2V @ 500mA, 5A
the supplier device package of TO-39 (TO-205AD)
2N5339T3 Applications
There are a lot of Microchip Technology
2N5339T3 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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