2N5339QFN
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- Mfr.Part #
- 2N5339QFN
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 13,612
- In Stock ：
- 13,612
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C ~ 200°C
- Supplier Device Package :
- TO-39 (TO-205AD)
- Transistor Polarity :
- NPN
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Package :
- Bulk
- Frequency - Transition :
- -
- Power - Max :
- 1 W
- Current - Collector Cutoff (Max) :
- 100μA
- Product Status :
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 2A, 2V
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Current - Collector (Ic) (Max) :
- 5 A
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Continuous Collector Current :
- 5
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 500mA, 5A
- Series :
- -
- Datasheets
- 2N5339QFN
NPN -55°C ~ 200°C 100μA TO-205AD, TO-39-3 Metal Can Through Hole
2N5339QFN Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 2A, 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 500mA, 5A.Continuous collector voltages of 5 should be maintained to achieve high efficiency.TO-39 (TO-205AD) is the supplier device package for this product.This device displays a 100 V maximum voltage - Collector Emitter Breakdown.
2N5339QFN Features
the DC current gain for this device is 60 @ 2A, 2V
the vce saturation(Max) is 1.2V @ 500mA, 5A
the supplier device package of TO-39 (TO-205AD)
2N5339QFN Applications
There are a lot of Microchip Technology
2N5339QFN applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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