2N5317

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector-Emitter Voltage-Max :

80 V

Collector Current-Max (IC) :

10 A

Product Category :

Bipolar Transistors - BJT

Configuration :

Single

Number of Elements :

1

Voltage - Collector Emitter Breakdown (Max) :

80 V

Package :

Bulk

Product Type :

BJTs - Bipolar Transistors

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Power - Max :

87 W

Power Dissipation-Max (Abs) :

50 W

Frequency - Transition :

-

Product Status :

Active

Manufacturer :

Microchip

Polarity/Channel Type :

NPN

Surface Mount :

No

Brand :

Microchip Technology

Package / Case :

TO-211MA, TO-210AC, TO-61-4, Stud

Pin Count :

3

VCEsat-Max :

0.6 V

Supplier Device Package :

TO-61

Terminal Form :

Solder Lug

Terminal Position :

UPPER

Subcategory :

Transistors

Pbfree Code :

No

DC Current Gain-Min (hFE) :

30

Power Dissipation Ambient-Max :

50 W

JESD-30 Code :

O-MUPM-D3

Package Shape :

Round

Transistor Polarity :

NPN

Operating Temperature :

-65°C ~ 200°C (TJ)

Reach Compliance Code :

Unknown

Series :

-

Qualification Status :

Not Qualified

Transistor Type :

PNP

Mounting Type :

Stud Mount

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

-

Technology :

Si

Current - Collector (Ic) (Max) :

10 A

DC Current Gain (hFE) (Min) @ Ic, Vce :

-

Case Connection :

Isolated

Vce Saturation (Max) @ Ib, Ic :

-

Number of Terminals :

3