2N4998

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Polarity :

NPN

Vce Saturation (Max) @ Ib, Ic :

850mV @ 200μA, 1mA

Package Shape :

Round

DC Current Gain (hFE) (Min) @ Ic, Vce :

-

Collector Current-Max (IC) :

2 A

Max Power Dissipation :

35 W

Number of Pins :

3

Current - Collector Cutoff (Max) :

-

Transistor Type :

NPN

Product Status :

Active

Terminal Position :

UPPER

Terminal Form :

UNSPECIFIED

Number of Terminals :

3

Collector-Emitter Voltage-Max :

80 V

Package :

Bulk

Package / Case :

TO-210AA, TO-59-4, Stud

RoHS :

Non-Compliant

Reach Compliance Code :

Unknown

Mounting Type :

Stud Mount

Transistor Element Material :

SILICON

Series :

-

Product Category :

Bipolar Transistors - BJT

Manufacturer :

Microchip

Subcategory :

Transistors

Current - Collector (Ic) (Max) :

2 A

Collector Emitter Voltage (VCEO) :

80 V

Mount :

Stud

Radiation Hardening :

No

Voltage - Collector Emitter Breakdown (Max) :

80 V

Power Dissipation :

35 W

Power - Max :

35 W

Max Collector Current :

2 A

Operating Temperature :

-65°C ~ 200°C (TJ)

Brand :

Microchip Technology

JESD-30 Code :

O-MUPM-X3

Product Type :

BJTs - Bipolar Transistors

Frequency - Transition :

-

Polarity/Channel Type :

NPN

Supplier Device Package :

TO-59