2N4923G
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- Mfr.Part #
- 2N4923G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A TO126
- Stock
- 3,194
- In Stock ：
- 3,194
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 500mA 1V
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Weight :
- 4.535924g
- Operating Temperature :
- -65°C~150°C TJ
- hFE Min :
- 40
- Frequency :
- 3MHz
- Power Dissipation :
- 30W
- Number of Elements :
- 1
- Factory Lead Time :
- 6 Weeks
- Published :
- 2006
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Collector Current :
- 1A
- Gain Bandwidth Product :
- 3MHz
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Current Rating :
- 1A
- Current - Collector Cutoff (Max) :
- 500μA
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Pin Count :
- 3
- Package / Case :
- TO-225AA, TO-126-3
- Collector Emitter Saturation Voltage :
- 600mV
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Length :
- 7.7978mm
- Max Power Dissipation :
- 30W
- Base Part Number :
- 2N4923
- Height :
- 11.0998mm
- Width :
- 2.9972mm
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 3MHz
- Halogen Free :
- Halogen Free
- Collector Emitter Breakdown Voltage :
- 80V
- Voltage - Rated DC :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- 2N4923G
2N4923G Documents
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NPN -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
2N4923G Overview
This device has a DC current gain of 30 @ 500mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A maximum collector current of 1A volts is possible.
2N4923G Features
the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz
2N4923G Applications
There are a lot of ON Semiconductor
2N4923G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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