2N4921
- Mfr.Part #
- 2N4921
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 1A TO126
- Stock
- 35,314
- In Stock :
- 35,314
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 3MHz
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 500mA 1V
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Halogen Free :
- Halogen Free
- Collector Emitter Saturation Voltage :
- 600mV
- Packaging :
- Bulk
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Factory Lead Time :
- 2 Weeks
- Operating Temperature :
- -65°C~150°C TJ
- Transition Frequency :
- 3MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 500μA
- Collector Base Voltage (VCBO) :
- 40V
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Pbfree Code :
- yes
- Package / Case :
- TO-225AA, TO-126-3
- hFE Min :
- 40
- Published :
- 2000
- Collector Emitter Voltage (VCEO) :
- 40V
- Height :
- 11.04mm
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- Length :
- 7.74mm
- Gain Bandwidth Product :
- 3MHz
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 30W
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- Power Dissipation :
- 30W
- Weight :
- 4.535924g
- Current Rating :
- 1A
- Polarity/Channel Type :
- NPN
- Width :
- 2.66mm
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 1A
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 40V
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Base Part Number :
- 2N4921
- Element Configuration :
- Single
- Datasheets
- 2N4921
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NPN -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
2N4921G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 500mA 1V DC current gain.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 1A volts.
2N4921G Features
the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz
2N4921G Applications
There are a lot of ON Semiconductor
2N4921G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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