2N4920G
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- Mfr.Part #
- 2N4920G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A TO126
- Stock
- 36
- In Stock ：
- 36
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 7.7216mm
- Lead Free :
- Lead Free
- Transition Frequency :
- 3MHz
- Current Rating :
- -3A
- Operating Temperature :
- -65°C~150°C TJ
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Tin (Sn)
- Weight :
- 4.535924g
- hFE Min :
- 40
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2004
- Width :
- 2.667mm
- Height :
- 11.049mm
- Collector Emitter Breakdown Voltage :
- 80V
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Halogen Free :
- Halogen Free
- Pbfree Code :
- yes
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 2 Weeks
- Frequency :
- 3MHz
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 500mA 1V
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- 2N4920
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Max Collector Current :
- 3A
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 80V
- Power Dissipation :
- 30W
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 80V
- Package / Case :
- TO-225AA, TO-126-3
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 600mV
- Max Power Dissipation :
- 30W
- Number of Elements :
- 1
- Current - Collector (Ic) (Max) :
- 1A
- Gain Bandwidth Product :
- 3MHz
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -80V
- Current - Collector Cutoff (Max) :
- 500μA
- Packaging :
- Bulk
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- 2N4920G
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PNP -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
2N4920G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 500mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 3A volts.
2N4920G Features
the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
2N4920G Applications
There are a lot of ON Semiconductor
2N4920G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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