2N4919G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

TO-225AA, TO-126-3

Number of Terminations :

3

Pbfree Code :

yes

Power Dissipation :

30W

Halogen Free :

Halogen Free

Published :

2015

Number of Elements :

1

Pin Count :

3

Length :

31.75mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 500mA 1V

Current - Collector Cutoff (Max) :

500μA

Current Rating :

1A

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Packaging :

Bulk

Collector Emitter Breakdown Voltage :

60V

Vce Saturation (Max) @ Ib, Ic :

600mV @ 100mA, 1A

Gain Bandwidth Product :

3MHz

Collector Emitter Voltage (VCEO) :

60V

Collector Base Voltage (VCBO) :

60V

Factory Lead Time :

2 Weeks

Width :

6.35mm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Type :

PNP

Operating Temperature :

-65°C~150°C TJ

hFE Min :

40

Polarity/Channel Type :

PNP

Lead Free :

Lead Free

Height :

6.35mm

Voltage - Rated DC :

-60V

Collector Emitter Saturation Voltage :

600mV

Max Collector Current :

3A

Termination :

Through Hole

JESD-609 Code :

e3

Element Configuration :

Single

Max Power Dissipation :

30W

Terminal Finish :

Tin (Sn)

Base Part Number :

2N4919

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Surface Mount :

No

Frequency :

3MHz

Radiation Hardening :

No

Transistor Application :

SWITCHING

Transition Frequency :

3MHz

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Through Hole

Weight :

4.535924g

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

5V

Number of Pins :

3