2N4919
- Mfr.Part #
- 2N4919
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A TO126
- Stock
- 39,705
- In Stock :
- 39,705
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Transition Frequency :
- 3MHz
- Width :
- 6.35mm
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Surface Mount :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 500mA 1V
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- 600mV
- Voltage - Rated DC :
- -60V
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Gain Bandwidth Product :
- 3MHz
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Current Rating :
- 1A
- Current - Collector Cutoff (Max) :
- 500μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Factory Lead Time :
- 2 Weeks
- Length :
- 31.75mm
- Lead Free :
- Lead Free
- Frequency :
- 3MHz
- ECCN Code :
- EAR99
- hFE Min :
- 40
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Base Part Number :
- 2N4919
- Termination :
- Through Hole
- Operating Temperature :
- -65°C~150°C TJ
- Max Power Dissipation :
- 30W
- REACH SVHC :
- No SVHC
- Packaging :
- Bulk
- Max Collector Current :
- 3A
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 30W
- Number of Elements :
- 1
- Package / Case :
- TO-225AA, TO-126-3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 60V
- Element Configuration :
- Single
- Halogen Free :
- Halogen Free
- Height :
- 6.35mm
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Published :
- 2015
- Weight :
- 4.535924g
- Collector Base Voltage (VCBO) :
- 60V
- Datasheets
- 2N4919

PNP -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
2N4919G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 500mA 1V.The collector emitter saturation voltage is 600mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.In the part, the transition frequency is 3MHz.A maximum collector current of 3A volts can be achieved.
2N4919G Features
the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz
2N4919G Applications
There are a lot of ON Semiconductor
2N4919G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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