2N4919
- Mfr.Part #
- 2N4919
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A TO126
- Stock
- 39,705
- In Stock :
- 39,705
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Halogen Free :
- Halogen Free
- Pbfree Code :
- yes
- Current Rating :
- 1A
- Packaging :
- Bulk
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Through Hole
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 3MHz
- Frequency :
- 3MHz
- Termination :
- Through Hole
- Power Dissipation :
- 30W
- Base Part Number :
- 2N4919
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Surface Mount :
- No
- Factory Lead Time :
- 2 Weeks
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Voltage - Rated DC :
- -60V
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 3MHz
- Length :
- 31.75mm
- Weight :
- 4.535924g
- Terminal Finish :
- Tin (Sn)
- Height :
- 6.35mm
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Collector Current :
- 3A
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 500mA 1V
- Collector Emitter Saturation Voltage :
- 600mV
- Width :
- 6.35mm
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 500μA
- Package / Case :
- TO-225AA, TO-126-3
- Pin Count :
- 3
- hFE Min :
- 40
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 30W
- Published :
- 2015
- Datasheets
- 2N4919
2N4919 Documents

PNP -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
2N4919G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 500mA 1V.The collector emitter saturation voltage is 600mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.In the part, the transition frequency is 3MHz.A maximum collector current of 3A volts can be achieved.
2N4919G Features
the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz
2N4919G Applications
There are a lot of ON Semiconductor
2N4919G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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